GTM CORPORATION
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GBC857
P N P E P I T AX I A L P L A N A R T R A N S I S T O R
Description
The GBC857 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
Package Dimensions
SOT-23
TPU.34)QBDLBHF*
Millimeter
Millimeter
Min. Max.
1.90 REF.
REF.
REF.
Min.
Max.
3.10
2.80
1.60
0.50
0.10
0.55
A
B
C
D
E
F
2.70
2.40
1.40
0.35
0
G
H
K
J
L
M
1.00
0.10
0.40
0.85
0̓
1.30
0.20
-
1.15
10̓
0.45
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Ratings
Unit
ć
ć
V
Tj
+150
Tstg
-55 ~ +150
-50
VCBO
VCEO
VEBO
IC
-45
V
-5
V
-100
225
mA
mW
Total Power Dissipation
PD
Characteristics at Ta = 25к
Symbol
Min.
Typ.
Max.
Unit
V
Test Conditions
BVCBO
-50
-
-
IC=-100uA
IC=-1mA
BVCEO
BVEBO
ICBO
-45
-
-
-
V
-5
-
V
IE=-10uA
VCB=-30V
-
-
-90
-250
-700
-900
-
-15
-300
-650
-
nA
mV
mV
mV
mV
mV
mV
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VBE(on)1
VBE(on)2
hFE
-
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
-
-
-
-
-600
-750
-800
800
-
-
110
-
-
VCE=-5V, IC=-10mA
VCE=-5V, IC=-2mA
-
fT
150
-
MHz
pF
VCE=-5V, IC=-10mA
VCB=-10V, f=1MHz, IE=0A
Cob
-
6
GTM Product Specification