Datasheet > GBC856

GBC856

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	224K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GBC856 数据手册

GTM CORPORATION

Page : 1/2

GBC856

P N P E P I T AX I A L P L A N A R T R A N S I S T O R

Description

The GBC856 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.

Package Dimensions

SOT-23

TPU.34)QBDLBHF*

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

0.10

0.40

0.85

0̓

1.30

0.20

1.15

10̓

0.45

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

Unit

+150

Tstg

-55 ~ +150

-80

VCBO

VCEO

VEBO

-65

-5

-100

225

Total Power Dissipation

Characteristics at Ta = 25к

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-80

IC=-100uA

IC=-1mA

BVCEO

BVEBO

ICBO

-65

-5

IE=-10uA

VCB=-30V

-15

-300

-650

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

VBE(on)1

VBE(on)2

hFE

-75

-250

-700

-850

IC=-10mA, IB=-0.5mA

IC=-100mA, IB=-5mA

IC=-10mA, IB=-0.5mA

IC=-100mA, IB=-5mA

VCE=-5V, IC=-2mA

VCE=-5V, IC=-10mA

VCE=-5V, IC=-2mA

VCE=-5V, IC=-10mA

VCB=-10V, f=1MHz

-600

-750

-820

800

150

4.5

MHz

Cob

GTM Product Specification

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