GTM CORPORATION
Page : 1/2
GBC847
N P N E P I T AX I A L P L A N A R T R A N S I S T O R
Description
The GBC847 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
Package Dimensions
SOT-23
TPU.34)QBDLBHF*
Millimeter
Millimeter
Min. Max.
1.90 REF.
REF.
REF.
Min.
Max.
3.10
2.80
1.60
0.50
0.10
0.55
A
B
C
D
E
F
2.70
2.40
1.40
0.35
0
G
H
K
J
L
M
1.00
0.10
0.40
0.85
0̓
1.30
0.20
-
1.15
10̓
0.45
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Ratings
Unit
ć
ć
V
Tj
+150
Tstg
-55 ~ +150
VCBO
VCEO
VEBO
IC
50
45
V
6
V
100
225
mA
mW
Total Power Dissipation
PD
Characteristics at Ta = 25к
Symbol
Min.
Typ.
Max.
Unit
V
Test Conditions
BVCBO
50
-
-
-
-
IC=100uA
IC=1mA
BVCEO
BVEBO
ICBO
45
V
6
-
-
V
IE=10uA
VCB=30V
-
-
15
250
600
-
nA
mV
mV
mV
mV
mV
mV
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VBE(on)1
VBE(on)2
hFE
-
90
200
700
900
-
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
-
-
-
-
580
700
770
800
-
-
110
-
-
-
fT
300
3.5
MHz
pF
Cob
-
6
VCB=10V, f=1MHz, IE=0A
GTM Product Specification