Datasheet > GBC817

GBC817

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	209K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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GBC817 数据手册

GTM CORPORATION

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GBC817

N P N E P I T AX I A L P L A N A R T R A N S I S T O R

Description

The GBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.

Package Dimensions

SOT-23

TPU.34)QBDLBHF*

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

0.10

0.40

0.85

0̓

1.30

0.20

1.15

10̓

0.45

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

Unit

+150

Tstg

-55 ~ +150

VCBO

VCEO

VEBO

800

225

Total Power Dissipation

Characteristics at Ta = 25к

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVEBO

IE=-100uA

IC=10mA

IC=100uA

VCE=25V

VEB=4V

BVCEO

BVCES

ICES

100

700

1.2

630

IEBO

*VCE(sat)

VBE(on)

hFE

IC=500mA, IB=50mA

VCE=1V, IC=300mA

VCE=1V, IC=100mA

100

MHz

VCE=5V, IC=10mA, f=100MHz

VCB=10V, f=1MHz, IE=0A

Cob

GTM Product Specification

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