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GBC557 PDF预览

GBC557

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM 晶体晶体管
页数 文件大小 规格书
2页 184K
描述
PNP SILICON TRANSISTOR

GBC557 数据手册

 浏览型号GBC557的Datasheet PDF文件第2页 
ISSUED DATE :2005/10/21  
REVISED DATE :  
GTM  
CORPORATION  
GBC557  
The GBC557 is designed for drive and output-stages of audio amplifiers.  
P N P S I L I C O N T R A N S I S T O R  
Description  
Features  
ԦHigh DC Current Gain: 120~800 @VCE=-5V, I  
ԦComplementary to GBC547  
Package Dimensions  
D
C=-2mA  
TO-92  
E
S 1  
b1  
S E A T IN G  
P L A N E  
Millimeter  
Millimeter  
REF.  
REF.  
A
Min.  
Max.  
4.7  
Min.  
Max.  
4.7  
4.45  
1.02  
0.36  
0.36  
0.36  
D
E
4.44  
3.30  
12.70  
1.150  
2.42  
S1  
-
3.81  
-
b
0.51  
0.76  
0.51  
L
C
b1  
e1  
e
1.390  
2.66  
e1  
b
e
C
Absolute Maximum Ratings (T  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
A
=25к)  
Symbol  
V
V
V
Ratings  
-50  
-45  
Unit  
V
V
CBO  
CEO  
EBO  
-5  
V
Collector Current (continuous)  
I
C
-100  
mA  
Total Device Dissipation @ T  
A
=25к  
=25к  
625  
5.0  
mW  
P
D
D
Derate above 25к  
mW/к  
Total Device Dissipation @ T  
C
1.5  
12  
W
mW/к  
P
Derate above 25к  
Operating and Storage Junction Temperature  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
T
R
R
J
,
T
stg  
JA  
JC  
-55 ~ +150  
200  
к
к/W  
к/W  
83.3  
Electrical Characteristics (TA = 25к unless otherwise noted)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
V
V
nA  
V
V
V
V
V
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
-50  
-45  
-5  
-
-
-
-
-
-
-
-
-
-
-
I
I
I
C
=-100uA, I  
=-2mA, I =0  
=-100uA, I =0  
CE=-20V, VBE=0  
=-10mA, I =-0.5mA  
=-100mA, I =-5mA  
=-10mA, I =-0.5mA  
=-100mA, I =-5mA  
E=0  
C
B
E
C
I
CES  
-
-100  
-0.3  
-0.65  
-
V
*VCE(sat)  
*VCE(sat)  
*VBE(sat)  
*VBE(sat)  
*VBE(on)  
*VBE(on)  
*hFE  
1
2
1
2
1
2
-0.075  
-0.25  
-0.7  
-1.0  
-0.62  
-0.7  
-
I
I
I
I
V
V
V
V
V
C
B
C
C
C
B
B
-
B
-0.55  
-
120  
-0.7  
-0.82  
800  
-
CE=-5V, I  
CE=-5V, I  
CE=-5V, I  
CE=-5V, I  
C
C
C
C
=-2mA  
=-10mA  
=-2mA  
=-10mA, f=100MHz  
V
fT  
Cob  
-
-
320  
3.0  
MHz  
pF  
6.0  
CB=-10V, IC=0, f=1MHz  
*Pulse Test: Pulse WidthЉ380s, Duty CycleЉ2%  
Classification Of hFE  
Rank  
A
B
C
Range  
120 ~ 220  
180 ~ 460  
420 ~ 800  
GBC557  
Page: 1/2  

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