Datasheet > GBC548

GBC548

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
2页	169K
描述
NPN SILICON TRANSISTOR

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数据手册

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GBC548 数据手册

ISSUED DATE :2005/10/21

REVISED DATE :

GTM

CORPORATION

GBC548

N P N S I L I C O N T R A N S I S T O R

Description

The GBC548 is designed for drive and output-stages of audio amplifiers.

Features

ԦHigh DC Current Gain: 110~800 @VCE=5V, I

ԦComplementary to GBC558

Package Dimensions

C=2mA

TO-92

S 1

S E A T IN G

P L A N E

Millimeter

REF.

Min.

Max.

4.7

Min.

Max.

4.7

4.45

1.02

0.36

4.44

3.30

12.70

1.150

2.42

3.81

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings (T

Parameter

=25к)

Symbol

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

CBO

CEO

EBO

Collector Current (continuous)

100

Total Device Dissipation @ T

=25к

625

5.0

Derate above 25к

mW/к

Total Device Dissipation @ T

1.5

mW/к

Derate above 25к

Operating and Storage Junction Temperature

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

stg

ꢀJA

ꢀJC

-55 ~ +150

200

к/W

83.3

Electrical Characteristics (TA = 25к unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

=100uA, I

=1mA, I =0

=10uA, I =0

CE=35V, VBE=0

=10mA, I =0.5mA

=100mA, I =5mA

=10mA, I =0.5mA

E=0

CES

0.25

0.6

0.7

0.77

800

*VCE(sat)

*VBE(sat)

*VBE(on)

*hFE

0.09

0.2

0.7

0.55

CE=5V, I

=2mA

=10mA

110

150

=2mA

Cob

300

1.7

MHz

=10mA, f=100MHz

4.5

CB=10V, IC=0, f=1MHz

*Pulse Test: Pulse WidthЉ380ꢁs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

110 ~ 220

200 ~ 450

420 ~ 800

GBC548

Page: 1/2

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