Datasheet > GBC338

GBC338

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
3页	186K
描述
NPN SILICON TRANSISTOR

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GBC338 数据手册

ISSUED DATE :2005/10/21

REVISED DATE :

GTM

CORPORATION

GBC338

N P N S I L I C O N T R A N S I S T O R

Description

The GBC338 is designed for drive and output-stages of audio amplifiers.

Features

ԦHigh DC Current Gain: 100~630 @VCE=1V, I

ԦComplementary to GBC328

Package Dimensions

C=100mA

TO-92

S 1

S E A T IN G

P L A N E

Millimeter

REF.

Min.

Max.

4.7

Min.

Max.

4.7

4.45

1.02

0.36

4.44

3.30

12.70

1.150

2.42

3.81

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings (T

Parameter

=25к)

Symbol

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

CBO

CEO

EBO

Collector Current (continuous)

800

Total Device Dissipation @ T

=25к

625

5.0

Derate above 25к

mW/к

Total Device Dissipation @ T

1.5

mW/к

Derate above 25к

Operating and Storage Junction Temperature

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

stg

ꢀJA

ꢀJC

-55 ~ +150

200

к/W

83.3

Electrical Characteristics (TA = 25к unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

=100uA, I

=10mA, I

=100uA, I

CE=25V, VBE=0

EB=4V, I =0

=500mA, I =50mA

BVCEO

BVCES

BVEBO

E=10uA, I

CBO

CES

EBO

100

0.7

1.2

630

CB=20V, I

*VCE(sat)

*VBE(on)

CE=1V, I

CE=5V, I

=300mA

=100mA

=300mA

=10mA, f=100MHz

*hFE

100

210

MHz

Cob

CB=10V, IE=0, f=1MHz

*Pulse Test: Pulse WidthЉ380ꢁs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

100 ~ 250

160 ~ 400

250 ~ 630

GBC338

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