Datasheet > GBC328

GBC328

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
3页	189K
描述
PNP SILICON TRANSISTOR

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数据手册

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GBC328 数据手册

ISSUED DATE :2005/10/21

REVISED DATE :

GTM

CORPORATION

GBC328

P N P S I L I C O N T R A N S I S T O R

Description

The GBC328 is designed for drive and output-stages of audio amplifiers.

Features

ԦHigh DC Current Gain: 100~630 @VCE=-1V, I

ԦComplementary to GBC338

Package Dimensions

C=-100mA

TO-92

S 1

S E A T IN G

P L A N E

Millimeter

REF.

Min.

Max.

4.7

Min.

Max.

4.7

4.45

1.02

0.36

4.44

3.30

12.70

1.150

2.42

3.81

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings (T

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

=25к)

Symbol

Ratings

-30

-25

Unit

CBO

CEO

EBO

-5

Collector Current (continuous)

-800

Total Device Dissipation @ T

=25к

625

5.0

Derate above 25к

mW/к

Total Device Dissipation @ T

1.5

mW/к

Derate above 25к

Operating and Storage Junction Temperature

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

stg

ꢀJA

ꢀJC

-55 ~ +150

200

к/W

83.3

Electrical Characteristics (TA = 25к unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-30

-25

-30

-5

=-100uA, I

=-10mA, I

=-100uA, IE

BVCEO

BVCES

BVEBO

B=0

=-10uA, I

CB=-20V, I

CE=-25V, VBE=0

EB=-4V, I =0

=-500mA, I =-50mA

CBO

CES

EBO

-100

-0.7

-1.2

630

E=0

*VCE(sat)

*VBE(on)

CE=-1V, I

CE=-5V, I

=-300mA

=-100mA

=-300mA

=-10mA, f=100MHz

*hFE

100

260

MHz

Cob

CB=-10V, IE=0, f=1MHz

*Pulse Test: Pulse WidthЉ380ꢁs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

100 ~ 250

160 ~ 400

250 ~ 630

GBC328

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