Datasheet > GBAW56

GBAW56

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		二极管开关
页数	文件大小	规格书
2页	142K
描述
SURFACE MOUNT,SWITCHING DIODE

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GBAW56 数据手册

ISSUED DATE :2004/02/06

REVISED DATE :2005/12/23C

GTM

CORPORATION

GBAW56

S U R F A C E M O U N T, S W I T C H I N G D I O D E

Description

The GBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar technology,

and encapsulated in a small SOT-23 plastic SMD package.

Package Dimensions

TPU.34)QBDLBHF*

Style: Pin 1.Cathode 2.Cathode 3. Common Anode

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

1.30

0.20

0.10

0.40

0.85

0°

1.15

10°

0.45

Absolute Maximum Ratings at T

Parameter

A = 25к

Symbol

Ratings

+125

-65 ~ +150

Unit

Junction Temperature

Storage Temperature

Tstg

Repetitive Peak Reverse Voltage

Continuous Reverse Voltage

VRRM

single diode loaded (note1)

double diode loaded (note1)

150

Continuous Forward Current

130

Repetitive Peak Forward Current

FRM

500

Non-Repetitive Peak Forward Current (1ms)

Total Power Dissipation

FSM

250

Notes: 1. Device mounted on an FR4 printed-circuit board.

Electrical Characteristics ^{(at T}

A = 25к unless otherwise noted)

Parameter

Symbol

Min.

Max.

Unit

Test Conditions

Reverse Voltage

R=100uA

VF(1)

VF(2)

VF(3)

VF(4)

715

855

1000

1250

=1mA

=10mA

=50mA

=150mA

Forward Voltage

Reverse Current

R=80V

Diode Capacitance

VR=0, f=1MHz

Reverse Recovery Time

Trr

IF=IR=10mA, RL=100ꢀ measured at IR=1mA

GBAW56

Page: 1/2

下载PDF

与GBAW56相关器件

型号	品牌	描述	获取价格	数据表
GBB.0S.250.LN	ETC	CONN TAPERED WASHR FOR S SERIES	获取价格
GBB.1S.250.LN	ETC	CONN TAPERED WASHR FOR S SERIES	获取价格
GBB.2S.250.LN	ETC	CONN TAPERED WASHR FOR S SERIES	获取价格
GBB.5S.250.LN	ETC	CONN TAPERED WASHR FOR S SERIES	获取价格
GBB05DHAD	ETC	CONN EDGE DUAL FMALE 10POS 0.050	获取价格
GBB05DHAN	ETC	CONN EDGE DUAL FMALE 10POS 0.050	获取价格