Datasheet > GBAV151

GBAV151

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		二极管开关
页数	文件大小	规格书
2页	309K
描述
SURFACE MOUNT,SWITCHING DIODE

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数据手册

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GBAV151 数据手册

ISSUED DATE :2005/07/14

REVISED DATE :

GTM

CORPORATION

GBAV151

S U R F A C E M O U N T, S W I T C H I N G D I O D E

V O LT AG E 4 0 V, C U R R E N T 0 . 1 A

Description

The GBAV151 is designed for ultra high speed switching application.

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Min.

Max.

2.70

2.40

1.40

0.35

1.90 REF.

1.00

0.10

0.40

0.85

0̓

1.30

0.20

1.15

10̓

0.45

Absolute Maximum Ratings (At T

Parameter

A = 25к unless otherwise specified)

Symbol

Ratings

Unit

Max. Peak Reverse Voltage

Max. Reverse Voltage

V_RM

V_R

Max. Average Forward Rectified Current

100

225

Non-Repetitive Peak Forward surge Current @Tp =1.0us

@Tp =1.0s

I_FSM

500

Power Dissipation

T_J

225

Junction Temperature

Storage Temperature

150

T_STG

-55 ~ +150

Electrical Characteristics (At T

= 25к unless otherwise noted)

Characteristics

Reverse Breakdown Voltage

Forward Voltage

Symbol

V(BR

Min.

Max.

Unit

Test Conditions

)

=100ꢀA

=100mA

V_R=35V

V_R=0V, f=1.0MHz

=10mA, V_R=6V, R_L=100ꢁ, I_rr=0.1IR

1.2

100

2.0

3.0

Reverse Voltage Leakage Current

Diode Capacitance

Reverse Recovery Time (Figure 1)

GBAV151

Page: 1/2

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