GTM CORPORATION
Page : 1/2
GBAT54/A/C/S
Description
Silicon Schottky Barrier Double Diodes .
Package Dimensions
TPU.34)QBDLBHF*
Millimeter
Millimeter
Min.
1.90 REF.
REF.
REF.
Min.
2.70
2.40
1.40
0.35
0
Max.
3.10
2.80
1.60
0.50
0.10
0.55
Max.
A
B
C
D
E
F
G
H
K
J
L
M
1.00
1.30
0.20
-
0.10
0.40
0.85
0̓
1.15
10̓
0.45
Style : Pin 1.Anode 2.Cathode 3.Common Connection
Absolute Maximum Ratings
Parameter
Symbol
Tj
Ratings
+125
-65 ~ +125
30
Unit
ć
Junction Temperature
ć
Storage Temperature
Tstg
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Surge Forward Current
V
200
mA
mA
mA
mW
300
600
Total Power Dissipation at Ta = 25к
PD
230
Characteristics at Ta = 25к
characteristics
Symbol
Min
Max.
-
Unit
Test Conditions
V(BR)R
30
Reverse breakdown voltage
V
IR=10uA
VF(1)
VF(2)
VF(3)
VF(4)
VF(5)
IR
-
-
-
-
-
-
-
-
240
320
400
500
1000
2.0
10
mV
mV
mV
mV
mV
uA
pF
IF=0.1mA
IF=1mA
Forward Voltage
IF=10mA
IF=30mA
IF=100mA
VR=25V
Reverse Current
Total Capacitance
CT
VR=1V, f=1MHz
Trr
IF=IR=10mA, RL=100Ө measured at IR=1mA
Reverse Recover Time
5
ns
GTM Product Specification