5秒后页面跳转
GBAT54A PDF预览

GBAT54A

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM 肖特基二极管
页数 文件大小 规格书
2页 224K
描述
Silicon Schottky Barrier Double Diodes .

GBAT54A 数据手册

 浏览型号GBAT54A的Datasheet PDF文件第2页 
GTM CORPORATION  
Page : 1/2  
GBAT54/A/C/S  
Description  
Silicon Schottky Barrier Double Diodes .  
Package Dimensions  
TPU.34)QBDLBHF*  
Millimeter  
Millimeter  
Min.  
1.90 REF.  
REF.  
REF.  
Min.  
2.70  
2.40  
1.40  
0.35  
0
Max.  
3.10  
2.80  
1.60  
0.50  
0.10  
0.55  
Max.  
A
B
C
D
E
F
G
H
K
J
L
M
1.00  
1.30  
0.20  
-
0.10  
0.40  
0.85  
0̓  
1.15  
10̓  
0.45  
Style : Pin 1.Anode 2.Cathode 3.Common Connection  
Absolute Maximum Ratings  
Parameter  
Symbol  
Tj  
Ratings  
+125  
-65 ~ +125  
30  
Unit  
ć
Junction Temperature  
ć
Storage Temperature  
Tstg  
Repetitive Peak Reverse Voltage  
Forward Continuous Current  
Repetitive Peak Forward Current  
Surge Forward Current  
V
200  
mA  
mA  
mA  
mW  
300  
600  
Total Power Dissipation at Ta = 25к  
PD  
230  
Characteristics at Ta = 25к  
characteristics  
Symbol  
Min  
Max.  
-
Unit  
Test Conditions  
V(BR)R  
30  
Reverse breakdown voltage  
V
IR=10uA  
VF(1)  
VF(2)  
VF(3)  
VF(4)  
VF(5)  
IR  
-
-
-
-
-
-
-
-
240  
320  
400  
500  
1000  
2.0  
10  
mV  
mV  
mV  
mV  
mV  
uA  
pF  
IF=0.1mA  
IF=1mA  
Forward Voltage  
IF=10mA  
IF=30mA  
IF=100mA  
VR=25V  
Reverse Current  
Total Capacitance  
CT  
VR=1V, f=1MHz  
Trr  
IF=IR=10mA, RL=100Ө measured at IR=1mA  
Reverse Recover Time  
5
ns  
GTM Product Specification  

与GBAT54A相关器件

型号 品牌 描述 获取价格 数据表
GBAT54C GTM Silicon Schottky Barrier Double Diodes .

获取价格

GBAT54S GTM Silicon Schottky Barrier Double Diodes .

获取价格

GBAV151 GTM SURFACE MOUNT,SWITCHING DIODE

获取价格

GBAV152 GTM SURFACE MOUNT,SWITCHING DIODE

获取价格

GBAV70 GTM consists of two diodes in a plastic surface mount

获取价格

GBAV99 GTM consists of two diodes in a plastic surface mount

获取价格