Datasheet > GBAT34

GBAT34

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		肖特基二极管
页数	文件大小	规格书
2页	191K
描述
Schottky Diode

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GBAT34 数据手册

GTM CORPORATION

Page : 1/2

GBAT34

Description

Schottky Diode .

Package Dimensions

TPU.34)QBDLBHF*

Style : Pin 1.Anode 2.Cathode 3.Common Connection

Millimeter

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Min.

Max.

2.70

2.40

1.40

0.35

1.90 REF.

1.00

0.10

0.40

0.85

0̓

1.30

0.20

1.15

10̓

0.45

Absolute Maximum Ratings

Parameter

Peak forward current

Symbol

Ratings

Unit

200

Recurrent Peak Reverse Voltage

RMS Voltage

VRRM

RMS

DC Blocking Voltage

VDC

Average Forward Rectified Current

Peak Forward Surge Current at 1 Sec

Typical Junction Capacitance between Terminal(note 1)

Reverse Recovery Time(Note 2)

Operating Temperature Range

Storage Temperature

100

FSM

600

5.0

nSec

+150

-55 ~ +150

150

Tstg

Total Power Dissipation at Ta = 25к

Characteristics at Ta = 25к

characteristics

Symbol

Min

Max.

1000

2.0

Unit

Test Conditions

Maximum Instantaneous Forward Voltage

Maximum Average Reverse Current

IF=100mA

VR=25V

Note: 1.Measured at 1.0 MHz and applied reverse voltage of 1.0 volts.

2.Measured at applied forward current of 10 mA and reverse current of 10 mA.

3.ESD sensitive product handling required.

Characteristics Curve

GTM Product Specification

下载PDF

与GBAT34相关器件

型号	品牌	描述	获取价格	数据表
GBAT54	GTM	Silicon Schottky Barrier Double Diodes .	获取价格
GBAT54A	GTM	Silicon Schottky Barrier Double Diodes .	获取价格
GBAT54C	GTM	Silicon Schottky Barrier Double Diodes .	获取价格
GBAT54S	GTM	Silicon Schottky Barrier Double Diodes .	获取价格
GBAV151	GTM	SURFACE MOUNT,SWITCHING DIODE	获取价格
GBAV152	GTM	SURFACE MOUNT,SWITCHING DIODE	获取价格