Datasheet > G9015

G9015

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
3页	201K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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G9015 数据手册

ISSUED DATE :2004/11/18

REVISED DATE :

GTM

CORPORATION

G9015

P N P E P I TA X I A L P L A N A R T R A N S I S T O R

Description

he G9015 is designed for use in pre-amplifier of low level and low noise.

Package Dimensions

TO-92

S 1

S E A T IN G

P L A N E

Millimeter

REF.

Min.

Max.

4.7

Min.

Max.

4.7

4.45

1.02

0.36

4.44

3.30

12.70

1.150

2.42

3.81

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

Unit

+150

Tstg

-55 ~ +150

-50

VCBO

VCEO

VEBO

-45

-5

-100

450

Total Power Dissipation

Characteristics at Ta = 25к

Symbol

Min.

-50

-45

-5

Typ.

Max.

Unit

Test Conditions

BVCBO

IC=-100uA , IE=0

IC=-1mA, IB=0

BVCEO

BVEBO

ICBO

IE=-100uA, IC=0

-50

-0.7

-1.0

-0.75

600

VCB=-50V, IE=0

IEBO

VEB=-5V, IC=0

*VCE(sat)

*VBE(sat)

VBE(on)

*hFE

-0.20

-0.82

-0.65

200

190

4.5

IC=-100mA, IB=-5mA

VCE=-5V, IC=-2mA

VCE=-5V, IC=-1mA

VCE=-5V, IC=-10mA

VCB=-10V, f=1MHz

-0.6

100

MHz

Cob

*Pulse Test: Pulse Width≤380us, Duty Cycle≤2%

Classification Of hFE

Rank

hFE

100 - 300

200 - 600

G9015

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