Datasheet > G9014

G9014

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
3页	182K
描述
NPN EPITAXIAL TRANSISTOR

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数据手册

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G9014 数据手册

ISSUED DATE :2004/11/10

REVISED DATE :

GTM

CORPORATION

G9014

N P N E P I TA X I A L T R A N S I S T O R

Description

The G9014 is designed for general purpose amplifier applications.

Package Dimensions

TO-92

S 1

S E A T IN G

P L A N E

Millimeter

REF.

Min.

Max.

4.7

Min.

Max.

4.7

4.45

1.02

0.36

4.44

3.30

12.70

1.150

2.42

3.81

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

Unit

+150

Tstg

-55 ~ +150

VCBO

VCEO

VEBO

100

450

Total Power Dissipation

Characteristics at Ta = 25к

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

IC=100uA , IE=0

IC=1mA, IB=0

BVCEO

BVEBO

ICBO

IE=100uA, IC=0

VCB=50V, IE=0

VEB=5V, IC=0

0.3

IEBO

VCE(sat)

VBE(sat)

VBE(on)

hFE

0.14

0.84

0.63

280

270

2.20

IC=100mA, IB=5mA

VCE=5V, IC=2mA

VCE=5V, IC=1mA

VCE=5V, IC=10mA

0.58

100

150

0.7

1000

MHz

Cob

3.5

VCB=10V, f=1MHz, IE=0

Classification Of hFE

Rank

hFE

100 - 300

200-600

400-1000

G9014

Page: 1/3

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