Datasheet > G9012

G9012

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
2页	163K
描述
PNP EPITAXIAL TRANSISTOR

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数据手册

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G9012 数据手册

ISSUED DATE :2004/11/18

REVISED DATE :

GTM

CORPORATION

G9012

P N P E P I TA X I A L T R A N S I S T O R

Description

The G9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.

Package Dimensions

TO-92

S 1

S E A T IN G

P L A N E

Millimeter

REF.

Millimeter

REF.

Min.

4.45

1.02

0.36

Max.

Min.

Max.

4.7

4.44

3.30

12.70

1.150

2.42

3.81

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

+150

-55 ~ +150

-40

Unit

Tstg

VCBO

VCEO

VEBO

-20

-5

-500

Total Power Dissipation

625

Characteristics at Ta = 25к

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-40

IC=-100uA , IE=0

IC=-1mA, IB=0

IE=-100uA, IC=0

VCB=-25V, IE=0

VEB=-3V, IC=0

BVCEO

BVEBO

ICBO

-20

-5

-100

-0.6

-1.2

-0.9

300

IEBO

VCE(sat)

VBE(sat)

VBE(on)

hFE1

IC=-500mA, IB=-50mA

VCE=-1V, IC=-10mA

112

100

180

VCE=-1V, IC=-50mA

hFE2

VCE=-1V, IC=-500mA

VCE=-1V, IC=-10mA, f=100MHz

VCB=-10V, f=1MHz

MHz

Cob

Classification Of hFE1

Rank

hFE1

112 - 166

144 - 202

176 - 300

G9012

Page: 1/2

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