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G8550 PDF预览

G8550

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM 晶体晶体管
页数 文件大小 规格书
2页 136K
描述
PNP EPITAXIAL TRANSISTOR

G8550 数据手册

 浏览型号G8550的Datasheet PDF文件第2页 
ISSUED DATE :2004/12/27  
REVISED DATE :  
GTM  
CORPORATION  
G8550  
P N P E P ITAX I A L T R AN S IS T O R  
Description  
The G8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.  
Features  
*High Collector current (IC: 1.5A)  
*Complementary to G8050  
Package Dimensions  
D
TO-92  
E
S1  
b1  
SEAT IN G  
PL AN E  
Millimeter  
Min. Max.  
Millimeter  
Min. Max.  
REF.  
REF.  
A
4.45  
1.02  
0.36  
0.36  
0.36  
4.7  
-
0.51  
0.76  
0.51  
D
E
L
e1  
e
4.44  
3.30  
12.70  
4.7  
3.81  
-
S1  
b
b1  
1.150 1.390  
2.42 2.66  
C
e1  
b
e
C
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collect Current  
Symbol  
Ratings  
-40  
Unit  
V
V
V
A
V
CBO  
VCEO  
-25  
V
EBO  
-6  
I
I
C
B
-1.5  
-0.5  
+150  
Base Current  
A
Junction Temperature  
Storage Temperature Range  
Total Power Dissipation  
Tj  
ć
ć
W
TsTG  
-55 ~ +150  
1
PD  
Electrical Characteristics(Ta = 25к,unless otherwise specified)  
Symbol  
Min.  
-40  
-25  
-6  
-
Typ.  
Max.  
Unit  
V
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
-
-
-
-
-
-
-
-
-
-
-
-
9
-
-
-
I
I
I
V
V
C
C
=-100uA  
=-2mA  
V
V
nA  
nA  
V
E
=-100uA  
CB=-35V  
BE=-6V  
I
I
CBO  
-100  
-100  
-0.5  
-1.2  
-1  
EBO  
-
*VCE(sat)  
*VBE(sat)  
*VBE(on)  
-
-
-
l
l
C
=-800mA, I  
C=-800mA, I  
B
=-80mA  
=-80mA  
=-10mA  
=-5mA  
=-100mA  
=-800mA  
V
V
B
V
V
V
V
V
V
CE=-1V, I  
CE=-1V, I  
CE=-1V, I  
CE=-1V, I  
C
C
C
C
*hFE  
*hFE  
*hFE  
fT  
1
2
3
45  
120  
40  
100  
-
-
500  
-
-
MHz  
pF  
CE=-10V, I =-50mA, f=100MHz  
CB=-10V, IE=0, f=1MHz  
C
Cob  
-
* Pulse Test: Pulse WidthЉ380s, Duty CycleЉ2%  
Classification Of hFE  
2
Rank  
C
D
E
Range  
120 ~ 200  
160 ~ 320  
250 ~ 500  
G8550  
Page: 1/2  

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