ISSUED DATE :2003/11/11
REVISED DATE :2004/11/29B
GTM
CORPORATION
G8051S
N P N E P I TA X I A L T R A N S I ST O R
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
Description
The G8051S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio
amplifier for portable radio and general purpose applications.
Features
*Collector current up to 700mA
*Collector –Emitter voltage up to 20V
*Complementary to G8551S
Package Dimensions
D
E
S1
TO-92
b1
SEAT IN G
PL AN E
Millimeter
Min. Max.
Millimeter
Min. Max.
REF.
A
REF.
4.45
1.02
0.36
0.36
0.36
4.7
-
0.51
0.76
0.51
D
E
L
e1
e
4.44
3.30
12.70
4.7
3.81
-
S1
b
b1
1.150 1.390
2.42 2.66
C
e1
b
e
C
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Ratings
Unit
V
V
V
CBO
CEO
25
20
5
V
V
V
EBO
I
C
0.7
A
Tj
TsTG
Junction Temperature
Storage Temperature Range
Total Power Dissipation
+150
-55 ~ +150
625
ć
ć
mW
PD
Electrical Characteristics(Ta = 25к,unless otherwise specified)
Symbol
BVCBO
BVCEO
BVEBO
Min.
25
Typ.
Max.
Unit
V
Test Conditions
-
-
-
-
I
I
I
V
V
V
V
C
=10uA,I
=1mA,I
=10uA,I
CB=20V, I
BE=6V,Ic=0
E
=0
20
V
V
uA
nA
C
B=0
5
-
-
100
-
-
-
150
-
-
-
-
1
100
400
E
C
=0
I
CBO
E=0
I
EBO
h
FE
1
2
-
100
-
CE=1V,I
CE=1V,I
C
=150mA
=150mA
=50mA
VCE=1V,Ic=150mA
CE=10V,Ic=20mA, ,f=100MHz
CB=10V, I =0A,f=1MHz
hFE
-
0.5
1
C
VCE(sat)
V
V
lC=500mA,IB
VBE(on)
-
fT
Cob
-
10
-
-
MHz
pF
V
V
E
Classification Of hFE
1
Rank
C
D
E
Range
100-180
160-300
250-400
G8051S
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