Datasheet > G8051

G8051

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	141K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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G8051 数据手册

ISSUED DATE :2004/12/27

REVISED DATE :

GTM

CORPORATION

G8051

N P N E P ITAX IA L T R AN S IS T O R

Description

The G8051 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.

Features

*High Collector current (IC: 1.5A)

*Complementary to G8551

Package Dimensions

TO-92

SEAT IN G

PL AN E

Millimeter

Min. Max.

Millimeter

Min. Max.

REF.

4.45

1.02

0.36

4.7

0.51

0.76

0.51

4.44

3.30

12.70

4.7

3.81

1.150 1.390

2.42 2.66

Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collect Current

Symbol

Ratings

Unit

CBO

VCEO

EBO

1.5

Base Current

0.5

Junction Temperature

Storage Temperature Range

Total Power Dissipation

TsTG

+150

-55 ~ +150

Electrical Characteristics(Ta = 25к,unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

=100uA

=2mA

=100uA

CB=35V

BE=6V

CBO

100

0.5

1.2

EBO

*VCE(sat)

*VBE(sat)

*VBE(on)

=800mA, I

C=800mA, I

=80mA

=10mA

=5mA

=100mA

=800mA

CE=1V, I

*hFE

120

100

500

MHz

CE=10V, I =50mA, f=100MHz

CB=10V, IE=0, f=1MHz

Cob

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

120 ~ 200

160 ~ 320

250 ~ 500

G8051

Page: 1/2

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