GTM CORPORATION
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G706SD
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT AG E 4 0 V, C U R R E N T 0 . 0 3 A
Description
The G706SD is designed for general purpose detection and high speed switching.
Package Dimensions
TPU.34)QBDLBHF*
Millimeter
Millimeter
Min.
1.90 REF.
REF.
REF.
Min.
Max.
3.10
2.80
1.60
0.50
0.10
0.55
Max.
A
B
C
D
E
F
2.70
2.40
1.40
0.35
0
G
H
K
J
L
M
1.00
1.30
0.20
-
1.15
10̓
0.10
0.40
0.85
0̓
0.45
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Tj
Ratings
Unit
ć
ć
V
Junction Temperature
+125
Storage Temperature
Tstg
VRRM
VRMS
VDC
IFSM
CJ
-40 ~ +125
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
45
32
V
Maximum DC Blocking Voltage
40
V
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal
Maximum Average Forward Rectified Current
Total Power Dissipation
0.2
2.0
0.03
225
A
pF
A
Io
PD
mW
Characteristics at Ta = 25к
Characteristics
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
Symbol
Typ.
0.37
1.0
Unit
Test Condition
IF = 1mA
VF
IR
V
uA
VR = 10V
GTM Product Specification