Datasheet > G6718

G6718

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	160K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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G6718 数据手册

ISSUED DATE :2005/09/05

REVISED DATE :

GTM

CORPORATION

G6718

N P N E P I T AX I A L P L A N A R T R A N S I S T O R

Description

The G6718 is designed for general purpose medium power amplifier and switching applications.

Features

ԦHigh Power: 850mW

ԦHigh Current: 1A

Package Dimensions

TO-92

S 1

S E A T IN G

P L A N E

Millimeter

REF.

Min.

4.45

1.02

0.36

Max.

4.7

Min.

4.44

3.30

12.70

1.150

2.42

Max.

4.7

3.81

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings (T

Parameter

=25к)

Symbol

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

CBO

100

VCEO

100

EBO

200

Total Device Dissipation

Junction Temperature

Storage Temperature

850

150

stg

-55 ~ +150

Electrical Characteristics (TA = 25к unless otherwise noted)

Symbol

Min.

100

Typ.

Max.

Unit

Test Conditions

BVCBO

=100uA, I

=1mA, I =0

=35mA

E=0

BVCEO

BVEBO

E=10uA, IC

CBO

100

350

CB=80V, IE

*VCE(sat)

=350mA, I

*hFE

CE=1V, I

=50mA

300

=250mA

=500mA

MHz

CE=10V, I

CB=10V, I

=50mA, f=100MHz

=0, f=1MHz

Cob

*Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

50 ~ 115

95 ~ 300

G6718

Page: 1/2

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