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G425SD PDF预览

G425SD

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM 肖特基二极管
页数 文件大小 规格书
2页 227K
描述
SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 0.1A

G425SD 数据手册

 浏览型号G425SD的Datasheet PDF文件第2页 
GTM CORPORATION  
Page : 1/2  
G425SD  
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E  
V O LT AG E 4 0 V, C U R R E N T 0 . 1 A  
Description  
The G425SD is designed for low power rectification.  
Package Dimensions  
TPU.34)QBDLBHF*  
Millimeter  
Min.  
Millimeter  
REF.  
REF.  
Max.  
3.10  
2.80  
1.60  
0.50  
0.10  
0.55  
Min.  
Max.  
A
B
C
D
E
F
2.70  
2.40  
1.40  
0.35  
0
G
H
K
J
L
M
1.90 REF.  
1.00  
0.10  
0.40  
0.85  
0̓  
1.30  
0.20  
-
1.15  
10̓  
0.45  
Absolute Maximum Ratings at Ta = 25к  
Parameter  
Symbol  
Tj  
Ratings  
+125  
-40 ~ +125  
40  
Unit  
ć
ć
V
Junction Temperature  
Storage Temperature  
Tstg  
VRRM  
VRMS  
VDC  
IFSM  
CJ  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
28  
V
Maximum DC Blocking Voltage  
40  
V
Peak Forward Surge Current at 8.3mSec single half sine-wave  
Typical Junction Capacitance between Terminal  
Maximum Average Forward Rectified Current  
Total Power Dissipation  
1.0  
A
6.0  
pF  
A
Io  
0.1  
PD  
225  
mW  
Characteristics at Ta = 25к  
Characteristics  
Maximum Instantaneous Forward Voltage  
Maximum Instantaneous Forward Voltage  
Maximum Average Reverse Current  
Symbol  
Typ.  
0.55  
0.34  
30  
Unit  
Test Condition  
IF(1) = 100mA  
IF(2) = 10mA  
VR = 10V  
VF(1)  
VF(2)  
IR  
V
V
uA  
GTM Product Specification  

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