GTM CORPORATION
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G425SD
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT AG E 4 0 V, C U R R E N T 0 . 1 A
Description
The G425SD is designed for low power rectification.
Package Dimensions
TPU.34)QBDLBHF*
Millimeter
Min.
Millimeter
REF.
REF.
Max.
3.10
2.80
1.60
0.50
0.10
0.55
Min.
Max.
A
B
C
D
E
F
2.70
2.40
1.40
0.35
0
G
H
K
J
L
M
1.90 REF.
1.00
0.10
0.40
0.85
0̓
1.30
0.20
-
1.15
10̓
0.45
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Tj
Ratings
+125
-40 ~ +125
40
Unit
ć
ć
V
Junction Temperature
Storage Temperature
Tstg
VRRM
VRMS
VDC
IFSM
CJ
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
28
V
Maximum DC Blocking Voltage
40
V
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal
Maximum Average Forward Rectified Current
Total Power Dissipation
1.0
A
6.0
pF
A
Io
0.1
PD
225
mW
Characteristics at Ta = 25к
Characteristics
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
Symbol
Typ.
0.55
0.34
30
Unit
Test Condition
IF(1) = 100mA
IF(2) = 10mA
VR = 10V
VF(1)
VF(2)
IR
V
V
uA
GTM Product Specification