Datasheet > G402SD

G402SD

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		肖特基二极管
页数	文件大小	规格书
2页	198K
描述
SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 0.4A

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G402SD 数据手册

ISSUED DATE :2003/06/03

REVISED DATE :2006/05/24B

GTM

CORPORATION

G402SD

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O LT AG E 3 0 V, C U R R E N T 0 . 3 A

Description

The G402SD is high frequency rectification for switching power supply.

Package Dimensions

SOT-23

TPU.34)QBDLBHF*

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

2.70

2.40

1.40

0.35

Max.

3.10

2.80

1.60

0.50

0.10

0.55

1.00

1.30

0.20

0.10

0.40

0.85

0°

1.15

10°

0.45

Absolute Maximum Ratings at T

Parameter

A = 25к

Symbol

Ratings

Unit

Junction Temperature

+125

Storage Temperature

Tstg

V_RRM

V_RMS

V_DC

I_FSM

C_J

-55 ~ +125

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Peak Forward Surge Current at 8.3mSec single half sine-wave

Typical Junction Capacitance between Terminal (Note 1)

Maximum Average Forward Rectified Current

Total Power Dissipation

3.0

0.3

225

Electrical Characteristics (at T

A = 25к unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IR=100ꢀA

Reverse Breakdown Voltage

(BR)R

Maximum Instantaneous Forward Voltage

500

ꢀA

IF=300mA

VR1=10V

VR2=30V

Maximum Average Reverse Current

100

Notes: 1. Measured at 1.0 MHz and 0 reverse bias voltage.

2. ESD sensitive product handling required.

G402SD

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