Pb Free Plating Product
ISSUED DATE :2007/01/15
REVISED DATE :
GTM
CORPORATION
G3407
BVDSS
DS(ON)
-30V
52mꢀ
-4.1A
R
P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T
I
D
Description
The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or in PWM applications.
Features
*Lower Gate Charge
*Small Package Outline
*RoHS Compliant
Package Dimensions
TPU.34)QBDLBHF*
Millimeter
Millimeter
REF.
REF.
Min.
Max.
3.10
2.80
1.60
0.50
0.10
0.55
Min.
Max.
A
B
C
D
E
F
2.70
2.40
1.40
0.35
0
G
H
K
J
L
M
1.90 REF.
1.00
0.10
0.40
0.85
0°
1.30
0.20
-
1.15
10°
0.45
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
-30
Unit
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
ID @T
ID @T
A
=25к
=70к
-4.1
A
A
-3.5
A
IDM
-20
A
Power Dissipation
PD @T
A
=25к
1.38
0.01
W
Linear Derating Factor
Operating Junction and Storage Temperature Range
W/к
к
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-a
Ratings
Unit
к/W
Thermal Resistance Junction-ambient3 Max.
90
G3407
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