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G3314 PDF预览

G3314

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM /
页数 文件大小 规格书
4页 384K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

G3314 数据手册

 浏览型号G3314的Datasheet PDF文件第2页浏览型号G3314的Datasheet PDF文件第3页浏览型号G3314的Datasheet PDF文件第4页 
Pb Free Plating Product  
ISSUED DATE :2005/03/04  
REVISED DATE :  
GTM  
CORPORATION  
G3314  
BVDSS  
DS(ON)  
-30V  
240m  
-1.9A  
R
P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T  
I
D
Description  
The G3314 provides the designer with the best combination of fast switching, low on-resistance and  
cost-effectiveness.  
Features  
*Low On-resistance  
*Ultrahigh-speed switching  
*4V drive  
Package Dimensions  
TPU.34)QBDLBHF*  
Millimeter  
Millimeter  
Min.  
1.90 REF.  
1.00  
0.10  
0.40  
0.85  
0̓  
REF.  
REF.  
Min.  
Max.  
3.10  
2.80  
1.60  
0.50  
0.10  
0.55  
Max.  
A
B
C
D
E
F
2.70  
2.40  
1.40  
0.35  
0
G
H
K
J
L
M
1.30  
0.20  
-
1.15  
10̓  
0.45  
Absolute Maximum Ratings  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Ratings  
-30  
Unit  
V
Gate-Source Voltage  
VGS  
V
A
A
A
W
W/ć  
ć
f20  
-1.9  
-1.5  
-10  
1.38  
0.01  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1,2  
Power Dissipation  
ID @T  
ID @T  
A
=25к  
=70к  
A
IDM  
PD @T  
A=25к  
Linear Derating Factor  
Operating Junction and Storage Temperature Range  
Tj, Tstg  
-55 ~ +150  
Thermal Data  
Parameter  
Symbol  
Rthj-a  
Ratings  
Unit  
ć/W  
Thermal Resistance Junction-ambient3 Max.  
90  
G3314  
Page: 1/4  

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