Datasheet > G2U9972

G2U9972

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	299K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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G2U9972 数据手册

Pb Free Plating Product

ISSUED DATE :2005/07/05

GTM

CORPORATION

REVISED DATE :

BVDSS

DS(ON)

60V

18mΩ

60A

G2U9972

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The G2U9972 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-262 package is universally preferred for all commercial-industrial applications and suited for low

voltage applications such as DC/DC converters.

Features

*Simple Drive Requirement

*Lower Gate Charge

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

Min.

1.25

1.17

Max.

1.45

1.47

4.40

0.76

0.36

8.60

9.80

13.25

14.25

2.54 REF.

1.27 REF.

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

f25

I_D@T

I_DM

P_D@T =25к

=25к

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

=100к

230

Total Power Dissipation

W/ć

Linear Derating Factor

Avalanche Current²

0.7

I_AR

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

1.4

Unit

ć/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

G2U9972

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