Datasheet > G2U4407

G2U4407

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	297K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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G2U4407 数据手册

Pb Free Plating Product

ISSUED DATE :2005/07/05

GTM

CORPORATION

REVISED DATE :

BVDSS

DS(ON)

-30V

14mΩ

-50A

G2U4407

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The G2U4407 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-262 package is universally preferred for all commercial-industrial applications and suited for low

voltage applications such as DC/DC converters.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching Characteristic

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

Min.

1.25

1.17

Max.

1.45

1.47

4.40

0.76

0.36

8.60

9.80

13.25

14.25

2.54 REF.

1.27 REF.

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

f25

-50

I_D@T

I_DM

P_D@T =25к

=25к

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

=100к

-32

-180

Total Power Dissipation

Linear Derating Factor

0.4

W/ć

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-case

Rthj-amb

Value

2.3

Unit

ć/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

G2U4407

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