Datasheet > G2U09N70

G2U09N70

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	314K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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G2U09N70 数据手册

Pb Free Plating Product

ISSUED DATE :2005/04/21

GTM

CORPORATION

REVISED DATE :

BVDSS 600/650/700

G2U09N70

DS(ON)

0.75Ω

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The G2U09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC

converter applications. TO-262 type provide high blocking voltage to overcome voltage surge and sag in the

toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.

The TO-262 package is universally preferred for all commercial-industrial applications. The device is suited for

switch mode power supplies, DC-AC converters and high current high speed switching circuits.

Features

*Dynamic dv/dt Rating

*Simple Drive Requirement

*Repetitive Avalanche Rated

*Fast Switching Speed

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

Min.

1.25

1.17

Max.

1.45

1.47

4.40

0.76

0.36

8.60

9.80

13.25

14.25

2.54 REF.

1.27 REF.

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

- /A/H

600/650/700

Gate-Source Voltage

V_GS

f20

I_D@T

I_DM

P_D@T =25к

=25к

Continuous Drain Current , V_GS@10V

Pulsed Drain Current¹

=100к

Total Power Dissipation

156

Linear Derating Factor

Single Pulse Avalanche Energy²

1.25

W/ć

E_AS

I_AR

305

Avalanche Current

Repetitive Avalanche Energy

E_AR

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

0.8

Unit

ć/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

G2U09N70

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