Pb Free Plating Product
ISSUED DATE :2005/04/21
GTM
CORPORATION
REVISED DATE :
BVDSS 600/650/700
V
G2U09N70
R
DS(ON)
0.75Ω
9A
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The G2U09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC
converter applications. TO-262 type provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.
The TO-262 package is universally preferred for all commercial-industrial applications. The device is suited for
switch mode power supplies, DC-AC converters and high current high speed switching circuits.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching Speed
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.80
1.00
0.50
9.00
10.4
Min.
1.25
1.17
Max.
1.45
1.47
A
b
c
D
E
4.40
0.76
0.36
8.60
9.80
c2
b2
L
e
L2
13.25
14.25
2.54 REF.
1.27 REF.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
Unit
V
Drain-Source Voltage
- /A/H
600/650/700
Gate-Source Voltage
VGS
V
f20
ID @T
ID @T
IDM
PD @T =25к
C
=25к
Continuous Drain Current , VGS@10V
Continuous Drain Current , VGS@10V
Pulsed Drain Current1
9
A
C
=100к
5
A
40
A
C
Total Power Dissipation
156
W
Linear Derating Factor
Single Pulse Avalanche Energy2
1.25
W/ć
mJ
A
EAS
IAR
305
Avalanche Current
9
9
Repetitive Avalanche Energy
EAR
mJ
ć
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-c
Value
0.8
Unit
ć/W
ć/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
62
G2U09N70
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