Datasheet > G2SD655

G2SD655

更新时间： 2022-04-23 23:00:11

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GTM		/
页数	文件大小	规格书
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描述
Silicon NPN Epitaxial

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数据手册

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G2SD655 数据手册

ISSUED DATE :2004/05/24

REVISED DATE :2004/11/29B

GTM

CORPORATION

G2SD655

S i l i c o n N P N E pi ta xi al

Application

Low frequency power amplifier, Muting.

Package Dimensions

TO-92

SEAT IN G

PL AN E

Millimeter

REF.

Min.

4.45

1.02

0.36

Max.

4.7

Min.

4.44

3.30

12.70

Max.

4.7

3.81

0.51

0.76

0.51

1.150 1.390

2.42 2.66

Absolute Maximum Ratings (Ta = 25к)

Parameter

Ratings

Unit

CBO

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collect Current(DC)

CEO

EBO

0.7

C(peak)

Collect peak current

1.0

Junction Temperature

+150

Tstg

Storage Temperature Range

Total Power Dissipation

-55 ~ +150

500

Electrical Characteristics(Ta = 25к)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

=10uA ,I

=1mA,RBE=Ќ

=10uA,I =0

CB=20V, IE=0

CE=1V,I =150mA

=500mA, I

E=0

BVCEO

BVEBO

CBO

1.0

0.5

1200

VCE(sat)

250

0.15

=50mA *²

FE1 *¹

CE=1V, I

=150mA *²

=150mA

250

MHz

Notes: 1. The G2SD655 is grouped by hFE as follows.

2. Pulse test

Classification of Rank

Rank

Range

250-500

400-800

600-1200

G2SD655

Page: 1/3

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