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G2N7002 PDF预览

G2N7002

更新时间: 2022-04-23 23:00:11
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GTM /
页数 文件大小 规格书
3页 313K
描述
N-CHANNELTRANSISTOR

G2N7002 数据手册

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GTM  
CORPORATION  
Page : 1/3  
G2N7002  
N - C H A N N E L T R A N S I S T O R  
Description  
N-channel enhancement-mode MOS TRANSISTOR  
Package Dimensions  
TPU.34)QBDLBHF*  
Millimeter  
REF.  
Millimeter  
Min.  
1.90 REF.  
1.00  
0.10  
0.40  
0.85  
0̓  
REF.  
Min.  
2.70  
2.40  
1.40  
0.35  
0
Max.  
3.10  
2.80  
1.60  
0.50  
0.10  
0.55  
Max.  
A
B
C
D
E
F
G
H
K
J
L
M
1.30  
0.20  
-
1.15  
10̓  
0.45  
Absolute Maximum Ratings at Ta = 25к  
Parameter  
Symbol  
Ratings  
-55 ~ +150  
60  
Unit  
ć
V
Operating Junction and Storage Temperature Range  
Tj, Tstg  
Drain-Source Voltage  
Gate-Source Voltage  
f20  
VGS  
V
-
-
Continuous  
f40  
VGSM  
V
Non-repetitive (tpЉ50us)  
(1)  
115  
73  
Ta=25ć  
Continuous Drain Current  
I
D
mA  
(1)  
Ta=100ć  
(2)  
800  
0.2  
mA  
W
I
DM  
Pulsed Drain Current (Ta=25ć )  
Ta=25ć  
Power Dissipation  
P
D
Ta=100ć  
0.08  
625  
ć/W  
Thermal Resistance ,Junction-to-Ambient  
RthJA  
Characteristics at Ta = 25к  
Symbol  
Parameter  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Min.  
Typ.  
Max.  
-
Unit  
V
Test Conditions  
BVDSS  
VGS(th)  
IGSS  
60  
-
-
-
-
-
-
-
-
-
-
-
-
-
VGS=0, ID=10uA  
1
2.5  
V
VDS=2.5V, ID=0.25mA  
VGS=f20V, VDS=0  
VDS=60V, VGS=0  
̈́100  
Gate Body Leakage Current  
Zero Gate Voltage Drain Current  
On-State Drain Current  
-
nA  
uA  
mA  
Idss  
-
1
-
ID(ON)  
500  
VDS =7.5V ,VGS=10V  
25ć  
-
-
7.5  
13.5  
7.5  
13.5  
-
Id=50mA, VGS=5V  
125ć  
25ć  
Static Drain-Source on-State Resistance  
Ө
RDS(ON)  
-
Id=500mA, VGS=10V  
125ć  
-
GFS  
Ciss  
Coss  
Crss  
Forward Transconductance  
Input Capacitance  
80  
-
mS  
pF  
pF  
pF  
VDS>2 VDS(ON), ID=200mA  
50  
25  
5
VDS=25V, VGS=0V, f=1MHz  
Output Capacitance  
-
Reverse Transfer Capacitance  
-
GTM Product Specification  

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