GTM
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G2N7002
N - C H A N N E L T R A N S I S T O R
Description
N-channel enhancement-mode MOS TRANSISTOR
Package Dimensions
TPU.34)QBDLBHF*
Millimeter
REF.
Millimeter
Min.
1.90 REF.
1.00
0.10
0.40
0.85
0̓
REF.
Min.
2.70
2.40
1.40
0.35
0
Max.
3.10
2.80
1.60
0.50
0.10
0.55
Max.
A
B
C
D
E
F
G
H
K
J
L
M
1.30
0.20
-
1.15
10̓
0.45
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
-55 ~ +150
60
Unit
ć
V
Operating Junction and Storage Temperature Range
Tj, Tstg
Drain-Source Voltage
Gate-Source Voltage
f20
VGS
V
-
-
Continuous
f40
VGSM
V
Non-repetitive (tpЉ50us)
(1)
115
73
Ta=25ć
Continuous Drain Current
I
D
mA
(1)
Ta=100ć
(2)
800
0.2
mA
W
I
DM
Pulsed Drain Current (Ta=25ć )
Ta=25ć
Power Dissipation
P
D
Ta=100ć
0.08
625
ć/W
Thermal Resistance ,Junction-to-Ambient
RthJA
Characteristics at Ta = 25к
Symbol
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Min.
Typ.
Max.
-
Unit
V
Test Conditions
BVDSS
VGS(th)
IGSS
60
-
-
-
-
-
-
-
-
-
-
-
-
-
VGS=0, ID=10uA
1
2.5
V
VDS=2.5V, ID=0.25mA
VGS=f20V, VDS=0
VDS=60V, VGS=0
̈́100
Gate Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
-
nA
uA
mA
Idss
-
1
-
ID(ON)
500
VDS =7.5V ,VGS=10V
25ć
-
-
7.5
13.5
7.5
13.5
-
Id=50mA, VGS=5V
125ć
25ć
Static Drain-Source on-State Resistance
Ө
RDS(ON)
-
Id=500mA, VGS=10V
125ć
-
GFS
Ciss
Coss
Crss
Forward Transconductance
Input Capacitance
80
-
mS
pF
pF
pF
VDS>2 VDS(ON), ID=200mA
50
25
5
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
-
Reverse Transfer Capacitance
-
GTM Product Specification