Datasheet > G2N7000

G2N7000

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
2页	188K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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G2N7000 数据手册

ISSUED DATE :2004/02/18

REVISED DATE :2006/10/30F

GTM

CORPORATION

G2N7000

N - C H A N N E L E N H A N C E M E N T M O D E M O S F E T

Description

The G2N7000 is designed for high voltage, high speed applications such as switching regulators, converters,

solenoid and relay drivers.

Package Dimensions

TO-92

S 1

S E A T IN G

P L A N E

Millimeter

REF.

Min.

Max.

4.7

Min.

4.44

3.30

12.70

1.150

2.42

Max.

4.7

3.81

4.45

1.02

0.36

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

j, stg

DSS

GSM

Ratings

-55 ~ +150

Unit

Operating Junction and Storage Temperature Range

Drain-Source Voltage

Gate-Source Voltage

-Continuous

±20

±40

-Non-repetitive (tp

Drain Current

-Continuous

Љ50us)

200

500

- Pulsed

Ta=25

0.35

2.8

mW/

Power Dissipation

Derate above 25

Thermal Resistance ,Junction-to-Ambient

RꢀJA

357

Maximum Lead Temperature for Soldering Purposes,1/16” from

case for 10 seconds

300

Electrical Characteristics (Tc= 25

к unless otherwise noted)

Parameter

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

V(BR)DSS

GS=0, I

=250uA

VGS(th)

0.8

3.0

±100

DS= VGS, I =1.0mA

Gate Body Leakage Current

Zero Gate Voltage Drain Current

On-State Drain Current

GSS

DSS

GS=±20V, VDS=0

DS=60V, VGS=0

D(ON)

GS =4.5V ,VDS=10V

5.0

6.0

2.5

0.45

GS=10V, I

D=500mA

Static Drain-Source on-State Resistance

Drain-Source on-Voltage

ꢁ

DS(ON)

GS=4.5V, I

D=75mA

GS=10V, I

GS=4.5V, I

DS=10 V, I

=500mA

VDS(ON)

=75mA

Forward Transconductance

Input Capacitance

100

=200mA

Ciss

DS=25V, VGS=0V, f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

G2N7000

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