Datasheet > G2N5551

G2N5551

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
3页	152K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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G2N5551 数据手册

ISSUED DATE :2004/06/09

REVISED DATE :2004/11/29B

GTM

CORPORATION

G2N5551

N P N E P I T AX I A L P L A N A R T R A N S I S T O R

Description

The G2N5551 is designed for general purpose switching and amplifier applications.

Features

*Complementary to PNP Type G2N5401

*High Collector – Emitter Breakdown Voltage (VCEO > 160V (@I

=1mA)

Package Dimensions

TO-92

SEAT IN G

PL AN E

Millimeter

Min. Max.

Millimeter

REF.

Min.

4.44

3.30

12.70

Max.

4.7

3.81

4.45

1.02

0.36

4.7

0.51

0.76

0.51

1.150 1.390

2.42 2.66

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

+150

-55 ~ +150

180

Unit

Tstg

CBO

CEO

160

EBO

600

Total Power Dissipation

625

Characteristics at Ta = 25к

Symbol

Min.

180

160

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

=100uA , I

=1mA,I =0

=10uA ,I =0

CB=120V, I =0

EB=4V, I =0

E=0

CBO

0.15

0.2

400

300

EBO

*VCE(sat)1

*VCE(sat)2

*VBE(sat)1

*VBE(sat)2

*hFE1

=10mA, I

=50mA, I

=10mA, I

=50mA, I

=1mA

=5mA

=1mA

=5mA

100

160

CE=5V, I

=1mA

*hFE2

*hFE3

=10mA

=50mA

Cob

MHz

CE=10V, I

=10mA, f=100MHz

CB=10V, f=1MHz, IE

* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%

Classification OF hFE

Rank

100-250

Range

80-200

160-400

G2N5551

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