ISSUED DATE :2004/04/23
REVISED DATE :2004/11/29B
GTM
CORPORATION
G2N4403
P N P E P I T AX I A L P L A N A R T A N S I S T O R
Description
The G2N4403 is designed for general purpose switching and amplifier applications.
Features
*Complementary to G2N4401
*High Power Dissipation: 625mW at 25к
*High DC Current Gain: 100-300 at 150mA
*High Breakdown Voltage: 40V Min
Package Dimensions
D
E
S 1
TO-92
b1
S E A T IN G
P L A N E
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
4.44
3.30
12.70
Max.
4.7
3.81
-
A
4.45
1.02
0.36
0.36
0.36
4.7
-
0.51
0.76
0.51
D
E
L
e1
e
S1
b
b1
1.150 1.390
2.42 2.66
C
e1
b
e
C
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Ratings
+150
-55 ~ +150
-40
Unit
кʳ
кʳ
V
Tj
Tstg
V
CBO
VCEO
VEBO
-40
V
-5
V
IC
-600
mA
mW
Total Power Dissipation
PD
625
Characteristics at Ta = 25к
Symbol
Min.
-40
-40
-5
Typ.
Max.
Unit
V
Test Conditions
BVCBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
I
I
I
C
=-100uA
BVCEO
BVEBO
ICEX
-
-
V
C=-1mA
V
E=-10uA
-
-100
-0.4
-750
-950
-1.3
-
nA
V
V
CE=-35V, VBE= -0.4V
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
-
I
I
I
I
C
=-150mA, I
=-500mA, I
=-150mA, I
=-500mA, I
B
B
B
B
=-15mA
=-15mA
=-15mA
=-50mA
-
mV
mV
V
C
C
C
-750
-
30
60
100
100
20
200
-
V
V
V
V
V
V
V
CE=-1V, I
CE=-1V, I
CE=-1V, I
CE=-2V, I
CE=-2V, I
B
C
C
C
C
=-0.1mA
*hFE2
-
=-1mA
*hFE3
-
=-10mA
=-150mA
=-500mA
*hFE4
300
-
*hFE5
fT
-
MHz
pF
CE=-10V, I
C=-20mA, f=100MHz
Cob
8.5
CB=-10V, f=1MHz
Classification OF hFE
4
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
Rank
A
B
Range
100-210
190-300
G2N4403
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