ISSUED DATE :2004/04/23
REVISED DATE :2004/11/29B
GTM
CORPORATION
G2N4401
N P N E P I T AX I A L P L A N A R T R A N S I S T O R
Description
The G2N4401 is designed for general purpose switching and amplifier applications.
Features
*Complementary to G2N4403
*High Power Dissipation: 625mW at 25ć
*High DC Current Gain: 100-300 at 150mA
*High Breakdown Voltage: 40V Min
Package Dimensions
D
E
S 1
TO-92
b1
S E A T IN G
P L A N E
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
4.44
3.30
12.70
Max.
4.7
3.81
-
A
4.45
1.02
0.36
0.36
0.36
4.7
-
0.51
0.76
0.51
D
E
L
e1
e
S1
b
b1
1.150 1.390
2.42 2.66
C
e1
b
C
e
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Ratings
Unit
ć
ć
V
Tj
+150
Tstg
-55 ~ +150
V
V
V
CBO
CEO
EBO
60
40
V
5
V
IC
600
625
mA
mW
Total Power Dissipation
PD
Characteristics at Ta = 25к
Symbol
Min.
60
40
5
Typ.
Max.
Unit
V
Test Conditions
BVCBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
I
I
I
C
=100uA
BVCEO
BVEBO
V
C=1mA
-
V
E=10uA
I
CE
X
-
100
400
750
950
1.2
-
nA
mV
mV
mV
V
V
CE=35V, VBE= 0.4V
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
-
I
I
I
I
C
=150mA, I
=500mA, I
=150mA, I
=500mA, I
B
B
B
B
=15mA
=50mA
=15mA
=50mA
-
C
C
C
750
-
20
40
80
100
40
250
-
V
V
V
V
V
V
V
CE=1V, I
CE=1V, I
CE=1V, I
CE=1V, I
CE=2V, I
B
C
C
C
C
=0.1mA
*hFE2
-
=1mA
*hFE3
-
=10mA
=150mA
=500mA
*hFE4
300
-
*hFE5
fT
-
MHz
pF
CE=10V, I
C=20mA, f=100MHz
Cob
6.5
CB=5V, f=1MHz
Classification Of hFE
4
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
Rank
A
B
Range
100-210
190-300
G2N4401
Page: 1/2