Datasheet > G2N3906

G2N3906

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	200K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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G2N3906 数据手册

ISSUED DATE :2004/08/31

GTM

CORPORATION REVISED DATE :2005/06/24C

G2N3906

The G2N3906 is designed for general purpose switching and amplifier applications.

P N P E P I TA X I A L P L A N A R T R A N S I ST OR

Description

Features

*Pb-free package are available

*Collector-Emitter Voltage: VCEO=-40V

*Collect Dissipation: Pc (max) =625mW

*Complementary to G2N3904

Package Dimensions

TO-92

S 1

S E A T IN G

P L A N E

Millimeter

REF.

Millimeter

REF.

Min.

4.45

1.02

0.36

Max.

4.7

Min.

4.44

3.30

12.70

1.150

2.42

Max.

4.7

3.81

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)

Parameter

Collector to Base Voltage

Symbol

Ratings

Unit

CBO

CEO

-40

Collector to Emitter Voltage

Emitter to Base Voltage

Collect Current(DC)

EBO

-5

-200

Junction Temperature

TsTG

+150

-55 ~ +150

625

Storage Temperature Range

Total Power Dissipation

Electrical Characteristics(Ta = 25к,unless otherwise specified)

Symbol

BVCBO

Min.

Typ.

Max.

Unit

Test Conditions

-40

IC=-10uA , IE=0

BVCEO

BVEBO

ICEX

-40

-5

IC=-1mA , IB=0

IE=-10uA, IC=0

VCE=-30V, VEB=-3V

VEB=-3V

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

VCE=-1V, IC=-0.1mA

VCE=-1V, IC=-1mA

VCE=-1V, IC=-10mA

VCE=-1V, IC=-50mA

-50

-0.25

-0.4

-0.85

-0.95

IEBO

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

-0.65

100

250

hFE

300

VCE=-1V, IC=-100mA

VCE=-20V, IE=-10mA, f=100MHz

VCB=-10V, f=100KHz

MHz

Cob

Cib

tstg

4.5

225

VEB=-0.5V, f=100KHz

VCC=-3V, VBE(OFF)=-0.5V, IC=-10mA, IB1=-1mA

VCC=-3V, IC=-10mA, IB1=-IB2=-1mA

G2N3906

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