Datasheet > G2N3904

G2N3904

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	129K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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G2N3904 数据手册

ISSUED DATE :2003/12/12

REVISED DATE :2005/06/24C

GTM

CORPORATION

G2N3904

The G2N3904 is designed for general purpose switching and amplifier applications.

N P N E P I TA X I A L P L A N A R T R A N S I S TO R

Description

Features

*Pb-free package are available

*Collector-Emitter Voltage: VCEO=40V

*Collect Dissipation: Pc (max) =625mW

*Complementary to G2N3906

Package Dimensions

TO-92

S 1

S E A T IN G

P L A N E

Millimeter

REF.

Millimeter

REF.

Min.

4.45

1.02

0.36

Max.

4.7

Min.

4.44

3.30

12.70

1.150

2.42

Max.

4.7

3.81

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)

Parameter

Collector to Base Voltage

Symbol

Ratings

Unit

CBO

CEO

Collector to Emitter Voltage

Emitter to Base Voltage

Collect Current(DC)

EBO

200

Junction Temperature

TsTG

+150

-55 ~ +150

625

Storage Temperature Range

Total Power Dissipation

Electrical Characteristics(Ta = 25к,unless otherwise specified)

Symbol

BVCBO

Min.

Typ.

Max.

Unit

Test Conditions

IC=10uA , IE=0

BVCEO

BVEBO

ICEX

IC=1mA , IB=0

IE=10uA, IC=0

VCE=30V, VEB=3V

VEB=3V

IC=10mA, IB=1mA

IC=50mA, IB=5mA

IC=10mA, IB=1mA

IC=50mA, IB=5mA

VCE=1V, IC=0.1mA

VCE=1V, IC=1mA

VCE=1V, IC=10mA

VCE=1V, IC=50mA

VCE=1V, IC=100mA

200

300

850

950

IEBO

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

650

hFE

100

300

MHz

VCE=20V, IE=-10mA, f=100MHz

VCB=10V, f=100KHz

Cob

Cib

VEB=0.5V, f=100KHz

200

VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA

VCC=3V, IC=10mA, IB1=-IB2=1mA

tstg

VCC=3V, IC=10mA, IB1=-IB2=1mA

G2N3904

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