Datasheet > G2308E

G2308E

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	330K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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G2308E 数据手册

Pb Free Plating Product

ISSUED DATE :2006/01/16

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

20V

600mΩ

1.2A

G2308E

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The G2308E utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

The SOT-23 package is universally used for all commercial-industrial applications.

Features

*Capable of 2.5V gate drive

*Lower on-resistance

*2KV ESD Capability

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

1.30

0.20

0.10

0.40

0.85

0°

1.15

10°

0.45

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

Gate-Source Voltage

V_GS

±6

Continuous Drain Current³, V_GS@4.5V

Pulsed Drain Current^1,2

I_D@T

=25к

=70к

1.2

1.0

I_DM

Total Power Dissipation

P_D@T

=25к

1.38

0.01

Linear Derating Factor

Operating Junction and Storage Temperature Range

W/к

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

к/W

Thermal Resistance Junction-ambient³Max.

G2308E

Page: 1/4

12 3 4

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