Datasheet > G2306

G2306

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	382K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

G2306 数据手册

Pb Free Plating Product

ISSUED DATE :2004/10/12

REVISED DATE :2005/03/22B

GTM

CORPORATION

G2306

BVDSS

DS(ON)

20V

32mΩ

5.3A

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The G2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

The SOT-23 package is universally used for all commercial-industrial applications.

Features

ԦCapable of 2.5V gate drive!

ԦLower on-resistance

ԦReliable and Rugged

Applications

ԦPower Management in Notebook Computer

ԦPortable Equipment

ԦBattery Powered System.

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

1.30

0.20

1.15

10̓

0.10

0.40

0.85

0̓

0.45

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

Gate-Source Voltage

V_GS

f12

5.3

4.3

Continuous Drain Current³, V_GS@4.5V

Pulsed Drain Current^1,2

I_D@T

=25к

=70к

I_DM

P_D@T

=25к

Power Dissipation

Linear Derating Factor

1.38

0.01

-55 ~ +150

W/ć

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

ć/W

Thermal Resistance Junction-ambient³Max.

G2306

Page: 1/4

12 3 4

下载PDF

与G2306相关器件

型号	品牌	描述	获取价格	数据表
G2306A	GTM	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格
G2307	GTM	P-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格
G2308	GTM	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格
G2308B	IDEA	Oblong, Domed, PCB Mount	获取价格
G2308E	GTM	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格
G2308S	IDEA	Oblong, Domed, PCB Mount	获取价格