Pb Free Plating Product
ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
GTM
CORPORATION
G2304
BVDSS
DS(ON)
25V
117mΩ
2.7A
R
N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T
I
D
Description
The G2304 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
ԦSuper High Dense Cell Design for Extremely Low RDS(ON)
ԦReliable and Rugged
Applications
ԦPower Management in Notebook Computer
ԦPortable Equipment
ԦBattery Powered System.
Package Dimensions
TPU.34)QBDLBHF*
Millimeter
Millimeter
Min.
1.90 REF.
1.00
0.10
0.40
0.85
0̓
REF.
REF.
Min.
Max.
3.10
2.80
1.60
0.50
0.10
0.55
Max.
A
B
C
D
E
F
2.70
2.40
1.40
0.35
0
G
H
K
J
L
M
1.30
0.20
-
1.15
10̓
0.45
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
25
Unit
V
Gate-Source Voltage
VGS
V
A
A
A
f20
2.7
2.2
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1,2
ID @T
ID @T
A
=25к
=70к
A
IDM
10
PD @T
A
=25к
Power Dissipation
Linear Derating Factor
1.38
0.01
-55 ~ +150
W
W/ć
ć
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Data
Parameter
Symbol
Rthj-a
Ratings
Unit
ć/W
Thermal Resistance Junction-ambient3 Max.
90
G2304
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