Datasheet > G152B

G152B

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	486K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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G152B 数据手册

Pb Free Plating Product

ISSUED DATE :2005/01/26

GTM

CORPORATION

REVISED DATE :2005/03/22B

BVDSS

DS(ON)

-20V

0.3Ω

-0.7A

G152B

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The G152B provide the designer with best combination of fast switching, low on-resistance and

cost-effectiveness.

The G152B is universally preferred for all commercial-industrial surface mount applications and suited for low

voltage applications such as DC/DC converters.

Features

ԦLow On-State Resistance:0.3Ө(max)

ԦUltra High Speed Switching

Applications

ԦNotebook PCs

ԦCellular and portable phones

ԦOn-board power supplies

ԦLi-ion battery System

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

1.30

0.20

0.10

0.40

0.85

0̓

1.15

10̓

0.45

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

-20

Unit

Gate-Source Voltage

V_GS

I_D

I_DM

f12

-0.7

-2.8

Continuous Drain Current³

Pulsed Drain Current^1,2

Power Dissipation

P_D@T

A=25к

0.5

Linear Derating Factor

Operating Junction and Storage Temperature Range

0.01

-55 ~ +150

W/ć

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

ć/W

Thermal Resistance Junction-ambient³Max.

G152B

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