Datasheet > G1333

G1333

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	351K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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G1333 数据手册

Pb Free Plating Product

ISSUED DATE :2005/03/10

GTM

CORPORATION

REVISED DATE :

BVDSS

DS(ON)

-20V

800mΩ

-550mA

G1333

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The G1333 provide the designer with best combination of fast switching, low on-resistance and

cost-effectiveness.

Features

*Simple Gate Drive

*Small Package Outline

*Fast Switching Speed

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

REF.

Min.

2.70

2.40

1.40

0.35

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Min.

Max.

1.90 REF.

1.00

0.10

0.40

0.85

0̓

1.30

0.20

1.15

10̓

0.45

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

-20

Unit

Gate-Source Voltage

V_GS

f12

-550

-440

2.5

1.0

0.008

Continuous Drain Current³

Pulsed Drain Current^1,2

Total Power Dissipation

Linear Derating Factor

W/ć

I_D@T

=25к

=70к

I_DM

P_D@T

A=25к

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

ć/W

Thermal Resistance Junction-ambient³Max.

125

G1333

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