Datasheet > G1332E

G1332E

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	263K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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G1332E 数据手册

Pb Free Plating Product

ISSUED DATE :2005/03/10

REVISED DATE :2006/11/24C

GTM

CORPORATION

BVDSS

DS(ON)

20V

600mꢀ

600mA

G1332E

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The G1332E provide the designer with best combination of fast switching, low on-resistance and

cost-effectiveness.

Features

*Simple Gate Drive

*Small Package Outline

*2KV ESD Rating (Per MIL-STD-883D)

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

REF.

Min.

2.70

2.40

1.40

0.35

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Min.

Max.

1.90 REF.

1.00

0.10

0.40

0.85

0°

1.30

0.20

1.15

10°

0.45

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

Gate-Source Voltage

V_GS

±5

Continuous Drain Current³

Pulsed Drain Current^1,2

Total Power Dissipation

Linear Derating Factor

I_D@T

=25к

=70к

600

470

2.5

I_DM

P_D@T

=25к

1.0

0.008

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Value

125

Unit

к/W

Thermal Resistance Junction-ambient³Max.

G1332E

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