Datasheet > G1270

G1270

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	170K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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G1270 数据手册

ISSUED DATE :2005/08/01

REVISED DATE :

GTM

CORPORATION

G1270

P N P E P I T AX I A L P L A N A R T R A N S I S T O R

Description

The G1270 is designed for general purpose switching and amplifier applications.

Features

ԦExcellent hFE(2)=25(Min.) @ VCE=-6V, I

C=-400mA

Package Dimensions

TO-92

S 1

S E A T IN G

P L A N E

Millimeter

REF.

Min.

Max.

4.7

Min.

Max.

4.7

4.45

1.02

0.36

4.44

3.30

12.70

1.150

2.42

3.81

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings (T

Parameter

=25к)

Symbol

Ratings

-35

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Total Device Dissipation

Junction Temperature

CBO

CEO

-30

EBO

-5

-500

625

150

Storage Temperature

Tstg

-55 ~ +150

Electrical Characteristics (TA = 25к unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-35

=-100uA, I

=-1mA, I =0

=-100uA, I =0

CB=-35V, I =0

EB=-5V, I =0

=-100mA, I =-10mA

E=0

BVCEO

BVEBO

-30

-5

CBO

-100

-0.25

-1.0

240

EBO

*VCE(sat)

*VBE(on)

CE=-1V, I

CE=-6V, I

CE=-1V, I

=-100mA

*hFE

=-100mA

100

=-400mA

MHz

=-10mA, f=100MHz

Cob

CB=-10V, IE=0, f=1MHz

*Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

FE1 Range

FE2 Range

70 - 140

Min. 25

120 - 240

Min. 40

G1270

Page: 1/2

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