Datasheet > G111K

G111K

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	365K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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G111K 数据手册

Pb Free Plating Product

ISSUED DATE :2005/04/27

GTM

CORPORATION

REVISED DATE :2005/07/14B

BVDSS

DS(ON)

55V

2Ω

G111K

640mA

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The G111K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

The G111K is universally used for all commercial-industrial applications.

Features

*Simple Drive Requirement

*Small Package Outline

*RoHS Compliant

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

1.30

0.20

0.10

0.40

0.85

0̓

1.15

10̓

0.45

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

Gate-Source Voltage

V_GS

f20

640

500

950

1.38

0.01

Continuous Drain Current³, V_GS@10V

Pulsed Drain Current^1,2

W/ć

I_D@T

=25к

=70к

I_DM

P_D@T

A=25к

Power Dissipation

Linear Derating Factor

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

ć/W

Thermal Resistance Junction-ambient³Max.

G111K

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