Datasheet > GT900SD120T2ZH-M

GT900SD120T2ZH-M

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
7页	553K
描述
IGBT Single-1200V

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中文翻译

获取价格

数据手册

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GT900SD120T2ZH-M 数据手册

GT900SD120T2ZH-M

Preliminary Data

IGBT Module

Features：



Field Stop Trench Gate IGBT

Short Circuit Rated>10μs

Low Saturation Voltage

Low Switching Loss

100% RBSOA Tested(2×Ic)

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：



Induction Heating

UPS Systems

High Power converters



IGBT, Inverter

Maximum Rated Values of IGBT (T_C=25℃unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

1200

±20

T_C=100℃

T_C=25℃

T_J=175℃

900

I_C

Continuous Collector Current

1670

1800

>10

I_CM

t_SC

P_D

Peak Collector Current Repetitive

Short Circuit Withstand Time

μss

T_C=25℃

T_Jmax=175℃

Maximum Power Dissipation (IGBT)

6000

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