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GT900SD120T2ZH-M PDF预览

GT900SD120T2ZH-M

更新时间: 2024-09-14 17:15:39
品牌 Logo 应用领域
银茂微 - SILVERMICRO 双极性晶体管
页数 文件大小 规格书
7页 553K
描述
IGBT Single-1200V

GT900SD120T2ZH-M 数据手册

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GT900SD120T2ZH-M  
Preliminary Data  
IGBT Module  
Features:  
Field Stop Trench Gate IGBT  
Short Circuit Rated>10μs  
Low Saturation Voltage  
Low Switching Loss  
100% RBSOA Tested(2×Ic)  
Low Stray Inductance  
Lead Free, Compliant with RoHS Requirement  
Applications:  
Induction Heating  
UPS Systems  
High Power converters  
IGBT, Inverter  
Maximum Rated Values of IGBT (TC=25unless otherwise specified)  
VCES  
VGES  
Collector-Emitter Blocking Voltage  
Gate-Emitter Voltage  
1200  
±20  
V
V
A
A
A
TC=100  
TC=25℃  
TJ=175℃  
900  
IC  
Continuous Collector Current  
1670  
1800  
>10  
ICM  
tSC  
PD  
Peak Collector Current Repetitive  
Short Circuit Withstand Time  
μss  
TC=25℃  
TJmax=175℃  
Maximum Power Dissipation (IGBT)  
6000  
WW  
www.njsme.com  
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05/29/202  
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