Datasheet > GT8G132_06

GT8G132_06

更新时间： 2024-11-18 03:29:19

品牌	Logo	应用领域
东芝 - TOSHIBA		闪光灯
页数	文件大小	规格书
6页	187K
描述
Strobe Flash Applications

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GT8G132_06 数据手册

GT8G132

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT8G132

Strobe Flash Applications

Unit: mm

•

Supplied in compact and thin package requires only a small

mounting area

•

5th generation (trench gate structure) IGBT

Enhancement-mode

4-V gate drive voltage: V

= 4.0 V (min) (@I = 150 A)

Peak collector current: I = 150 A (max)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

CES

GES

400

±6

Gate-emitter voltage

Collector current

Pulse

±8

1 ms

(Note 1)

150

1.1

JEDEC

JEITA

―

Collector power dissipation

Junction temperature

°C

150

−55~150

TOSHIBA

2-6J1C

Storage temperature range

stg

Weight: 0.080 g (typ.)

Note 1: Drive operation: Mount on glass epoxy board [1 inch × 1.5 t]

Note 2: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Equivalent Circuit

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

These devices are MOS type. Users should follow proper ESD handling procedures.

Operating condition of turn-off dv/dt should be lower than 400 V/μs.

2006-11-02

12 3 4 5 6

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