Datasheet > GT8G121(SM)

GT8G121(SM)

更新时间： 2024-11-06 21:17:35

品牌	Logo	应用领域
东芝 - TOSHIBA		栅双极性晶体管
页数	文件大小	规格书
5页	249K
描述
TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,8A I(C),TO-252AA

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技术参数
数据手册

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GT8G121(SM) 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	8 A
集电极-发射极最大电压：	400 V	门极-发射极最大电压：	6 V
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	20 W
子类别：	Insulated Gate BIP Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

GT8G121(SM) 数据手册

GT8G121

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT8G121

Unit: mm

STROBE FLASH APPLICATIONS

ꢀ 4th Generation (Trench Gate Structure)

ꢀ Enhancement−Mode

ꢀ Low Saturation Voltage

: V

= 7 V (Max.) (@I = 150 A)

CE (sat)

ꢀ 4 V Gate Drive

MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector−Emitter Voltage

400

±6

CES

GES

Pulse

Gate−Emitter Voltage

±8

Collector Current

1 ms

150

1.1

Ta = 25°C

Tc = 25°C

°C

Collector Power

Dissipation

JEDEC

JEITA

TOSHIBA

―

Junction Temperature

150

−55~150

Storage Temperature Range

stg

(A) 2−7B5C (B) 2−7B6C

Weight: 0.36 g

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

Gate Leakage Current

SYMBOL

TEST CONDITION

= 6 V, V = 0

MIN

TYP.

MAX

UNIT

―

1.5

µA

GES

Collector Cut−off Current

= 400 V, V

= 0

CES

Gate−Emitter Cut−off Voltage

Collector−Emitter Saturation Voltage

= 1 mA, V = 5 V

0.8

―

GE (OFF)

= 150 A, V

= 4 V (Pulsed)

3.5

CE (sat)

= 10 V, V

= 0,

Input Capacitance

―

3800

―

µs

ies

f = 1 MHz

Rise Time

―

2.3

2.5

1.7

2.1

―

Turn−on Time

Switching Time

Fall Time

Turn−off Time

off

Thermal Resistance

―

6.25 °C / W

th (j−c)

These devices are MOS type. Users should follow proper ESD Handling Procedures.

Operating condition of turn-off dv / dt should be lower than 400 V / µs.

2002-02-06

12 3 4 5

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