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GT8G121(2-7B5C) PDF预览

GT8G121(2-7B5C)

更新时间: 2024-11-20 20:09:47
品牌 Logo 应用领域
东芝 - TOSHIBA 双极性晶体管
页数 文件大小 规格书
5页 371K
描述
TRANSISTOR 8 A, 400 V, N-CHANNEL IGBT, 2-7B5C, 3 PIN, Insulated Gate BIP Transistor

GT8G121(2-7B5C) 技术参数

生命周期:Active包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
HTS代码:8541.29.00.95风险等级:5.73
其他特性:LOW SATURATION VOLTAGE外壳连接:COLLECTOR
最大集电极电流 (IC):8 A集电极-发射极最大电压:400 V
配置:SINGLE WITH BUILT-IN DIODEJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
标称断开时间 (toff):2100 ns标称接通时间 (ton):2500 ns
Base Number Matches:1

GT8G121(2-7B5C) 数据手册

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GT8G121  
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT  
GT8G121  
Unit: mm  
STROBE FLASH APPLICATIONS  
z
z
z
4th Generation (Trench Gate Structure)  
EnhancementMode  
Low Saturation Voltage  
: V  
CE (sat)  
= 7 V (Max.) (@I = 150 A)  
C
z
4 V Gate Drive  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
CHARACTERISTIC  
SYMBOL  
RATING  
UNIT  
CollectorEmitter Voltage  
V
V
V
400  
±6  
V
V
CES  
GES  
GES  
DC  
Pulse  
DC  
GateEmitter Voltage  
±8  
V
I
8
A
C
Collector Current  
1 ms  
I
150  
1.1  
A
CP  
Ta = 25°C  
Tc = 25°C  
P
W
W
°C  
°C  
C
C
Collector Power  
Dissipation  
P
20  
Junction Temperature  
T
j
150  
55~150  
JEDEC  
JEITA  
Storage Temperature Range  
T
stg  
(A) 27B5C (B) 27B6C  
TOSHIBA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 0.36 g  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
CHARACTERISTIC  
Gate Leakage Current  
SYMBOL  
TEST CONDITION  
= 6 V, V = 0  
MIN  
TYP.  
MAX  
UNIT  
I
V
V
10  
10  
1.5  
7
µA  
µA  
V
GES  
GE  
CE  
Collector Cutoff Current  
I
= 400 V, V  
= 0  
CES  
CE  
GE  
GateEmitter Cutoff Voltage  
CollectorEmitter Saturation Voltage  
V
I
C
I
C
= 1 mA, V = 5 V  
0.8  
GE (OFF)  
CE  
V
= 150 A, V  
= 4 V (Pulsed)  
3.5  
V
CE (sat)  
GE  
V
= 10 V, V  
= 0,  
CE  
GE  
Input Capacitance  
Rise Time  
C
3800  
pF  
µs  
ies  
f = 1 MHz  
t
2.3  
2.5  
1.7  
2.1  
r
Turnon Time  
Switching Time  
t
t
on  
Fall Time  
t
f
Turnoff Time  
off  
Thermal Resistance  
R
6.25 °C / W  
th (jc)  
These devices are MOS type. Users should follow proper ESD Handling Procedures.  
Operating condition of turn-off dv / dt should be lower than 400 V / µs.  
1
2006-11-02  

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