生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.73 |
其他特性: | LOW SATURATION VOLTAGE | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 8 A | 集电极-发射极最大电压: | 400 V |
配置: | SINGLE WITH BUILT-IN DIODE | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 2100 ns | 标称接通时间 (ton): | 2500 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT8G121(2-7B6C) | TOSHIBA |
获取价格 |
TRANSISTOR 8 A, 400 V, N-CHANNEL IGBT, 2-7B6C, 3 PIN, Insulated Gate BIP Transistor | |
GT8G121(SM) | TOSHIBA |
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TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,8A I(C),TO-252AA | |
GT8G121_06 | TOSHIBA |
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STROBE FLASH APPLICATIONS | |
GT8G131 | TOSHIBA |
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N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS) | |
GT8G131_06 | TOSHIBA |
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Strobe Flash Applications | |
GT8G132 | TOSHIBA |
获取价格 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
GT8G132_06 | TOSHIBA |
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Strobe Flash Applications | |
GT8G133 | TOSHIBA |
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Strobe Flash Applications | |
GT8G134 | TOSHIBA |
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Silicon N Channel IGBT Strobe Flash Applications | |
GT8G136 | TOSHIBA |
获取价格 |
Silicon N Channel IGBT Strobe Flash Applications |