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GT80J101B PDF预览

GT80J101B

更新时间: 2024-09-30 03:40:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管双极性晶体管
页数 文件大小 规格书
6页 69K
描述
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT80J101B 数据手册

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GT80J101B  
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT  
GT80J101B  
High Power Switching Applications  
Unit: mm  
·
·
·
Enhancement mode type  
High speed: t = 0.40 µs (max) (I = 80 A)  
f
C
Low saturation voltage: V  
= 2.9 V (max) (I = 80 A)  
C
CE (sat)  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-emitter voltage  
Gate-emitter voltage  
V
600  
±20  
33  
V
V
CES  
V
GES  
@Tc = 100°C  
Continuous collector  
current  
I
C
A
A
@Tc = 25°C  
80  
Pulsed collector current (Note 1)  
I
160  
80  
CP  
@Tc = 100°C  
Collector power  
@Tc = 25°C  
dissipation  
P
C
200  
3.5  
W
JEDEC  
JEITA  
?
?
@Ta = 25°C  
Junction temperature  
T
150  
- 55~150  
0.8  
°C  
°C  
j
Storage temperature  
T
stg  
TOSHIBA  
2-21F2C  
Screw torque  
¾
N·m  
Weight: 9.75 g (typ.)  
Note 1: The Maximum rating of ICP=160Ais limited by pulse (1ms).  
Refer to the graph of safe operating area for the detail.  
Thermal Characteristics  
Characteristics  
Symbol  
Rating  
0.625  
Unit  
Thermal resistance , junction to case  
R
R
°C/W  
th (j-c)  
th (j-a)  
(Tc = 25°C)  
Thermal resistance , junction to air  
35.7  
°C/W  
(Ta = 25°C)  
MARKING  
Part No. (or abbreviation code)  
Lot No.  
TOSHIBA  
80J101B  
JAPAN  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
1
2006-06-05  

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