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GT80J101A

更新时间： 2024-09-29 23:54:15
品牌 Logo 应用领域
其他 - ETC 晶体晶体管双极性晶体管
页数 文件大小 规格书
4页 218K
描述
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 80A I(C) | TO-247VAR

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GT80J101A 数据手册

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GT80J101A  
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type  
G T 8 0 J 1 0 1 A  
High Power Switching Applications  
•
•
•
Enhancement-Mode  
High Speed: t = 0.40 µs (max) (I = 80 A)  
f
C
Low Saturation Voltage: V  
= 3.0 V (max) (I = 80 A)  
C
CE (sat)  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-emitter voltage  
Gate-emitter voltage  
V
V
600  
20  
V
V
CES  
GES  
DC  
I
80  
C
Collector current  
1ms  
A
I
160  
CP  
Collector power dissipation (Tc = 25°C)  
Junction temperature  
P
200  
W
°C  
C
T
150  
j
Storage temperature  
T
−55~150  
0.8  
°C  
stg  
Screw torque  
N·m  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
I
V
V
V
=
25 V, V = 0  
3.0  
500  
1.0  
6.0  
2.0  
3.0  
nA  
mA  
V
GES  
GE  
CE  
CE  
CE  
Collector cut-off current  
= 600 V, V  
= 0  
CES  
GE  
Gate-emitter cut-off voltage  
V
= 5 V, I = 80 mA  
GE (OFF)  
C
V
V
(1)  
I
I
= 10 A, V  
= 15 V  
= 15 V  
CE (sat)  
CE (sat)  
C
C
GE  
GE  
Collector-emitter saturation voltage  
V
(2)  
= 80 A, V  
2.4  
5500  
Input capacitance  
Rise time  
C
ies  
V
= 10 V, V = 0, f = 1 MHz  
GE  
pF  
CE  
t
0.3  
0.5  
0.6  
0.8  
r
V
OUT  
33 Ω  
Turn-on time  
Switching time  
t
on  
V
IN  
µs  
15 V  
0
Fall time  
t
f
0.25  
0.40  
1.0  
V
CC = 300 V  
−15 V  
Turn-off time  
t
0.7  
off  
Thermal resistance  
R
th (j-c)  
0.625 °C/W  
961001EAA1  
• TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in  
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of  
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure  
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please  
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.  
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.  
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by  
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its  
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or  
others.  
• The information contained herein is subject to change without notice.  
2000-06-28 1/4  
1234

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