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GT75PI120T6H-T4M PDF预览

GT75PI120T6H-T4M

更新时间: 2024-11-02 17:15:35
品牌 Logo 应用领域
银茂微 - SILVERMICRO 双极性晶体管
页数 文件大小 规格书
13页 449K
描述
PIM IGBT-1200V

GT75PI120T6H-T4M 数据手册

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GT75PI120T6H-T4M  
IGBT Module  
Features:  
Field Stop Trench Gate IGBT  
Short Circuit Rated>10μs  
Low Saturation Voltage  
Low Switching Loss  
100% RBSOA Tested2×Ic)  
Low Stray Inductance  
Lead Free, Compliant with RoHS Requirement  
Applications:  
Industrial Inverters  
Servo Applications  
IGBT, Inverter  
Maximum Rated Values(TC=25unless otherwise specified)  
VCES  
VGES  
Collector-Emitter Blocking Voltage  
Gate-Emitter Voltage  
1200  
±20  
75  
V
V
TC=100℃  
TC=25  
TJ=175℃  
A
IC  
Continuous Collector Current  
150  
150  
>10  
535  
A
ICM  
tSC  
PD  
Peak Collector Current Repetitive  
Short Circuit Withstand Time  
A
μs  
W
TC=25℃  
TJmax=175℃  
Maximum Power Dissipation (IGBT)  
www.njsme.com  
2019 NJSME All rights reserved  
Page 1 REV.A  
05/09/2019  

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